NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver
Features: D High Breakdown Voltage: VCEO = 80V D Large IC Capacity: IC = 1A DC D Good hFE Linearity D Low Collector Saturation Voltage Applications: D Medium Power Output Stages D High-Voltage Drivers Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Note 1. PW = 20ms, Duty Cycle = 1/2 Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance Symbol Test Conditions Min 80 100 5 - - 120 - - - Typ - - - - - - 0.15 100 20 Max - - - 1 1 270 0.4 - - V MHz pF Unit V V V A A V(BR)CEO IC = 1mA V(BR)CBO IC = 50A V(BR)EBO IE = 50A ICBO IEBO hFE VCE(sat) fT Cob VCB = 80V VEB = 4V VCE = 3V, IC = 50mA IC = 500A, IB = 50mA VCE = 10V, IC = 50mA VCB = 10V, f = 1MHz
.102 (2.6)
.280 (7.11) .185 (4.7)
E
C
B
.100 (2.54) .051 (1.29)
.138 (3.5) .022 (0.55)
|
